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FCA22N60N N-Channel MOSFET
July 2009
SupreMOSTM
FCA22N60N
N-Channel MOSFET
600V, 22A, 0.165 Features
* RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A * BVDSS>650V @ TJ = 150oC * Ultra Low Gate Charge ( Typ. Qg = 45nC) * Low Effective Output Capacitance * 100% Avalanche Tested * RoHS Compliant
tm
Description
The SupreMOS MOSFET, Fairchild's next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry's AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
D
D
G
TO-3PN
G DS S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) Derate above 25oC (Note 3) Continuous (TC = 25oC) Continuous (TC = 100oC) Pulsed (Note 1) (Note 2) FCA22N60N 600 30 22 13.8 66 672 7.3 2.75 20 100 205 1.64 -55 to +150 300 Units V V A A mJ A mJ V/ns W W/oC
oC o
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RJS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Case to Heat Sink (Typical) Thermal Resistance, Junction to Ambient FCA22N60N 0.61 0.24 40
oC/W
Units
(c)2009 Fairchild Semiconductor Corporation FCA22N60N Rev. A2
1
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FCA22N60N N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FCA22N60N Device FCA22N60N Package TO-3PN Reel Size Tape Width Quantity 30
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 1mA, VGS = 0V,TJ = 25oC ID = 1mA, VGS = 0V, TJ = 150oC ID = 1mA, Referenced to 25oC VDS = 480V, VGS = 0V VDS = 480V, TJ = 125oC VGS = 50V, VDS = 0V 600 650 0.68 10 100 100 V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 11A VDS = 20V, ID = 11A 2.0 3 0.140 22 4.0 0.165 V S
Dynamic Characteristics
Ciss Coss Crss Coss Cosseff. Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge Equivalent Series Resistance (G-S) VDS = 380V, ID = 11A, VGS = 10V
(Note 4)
VDS = 100V, VGS = 0V f = 1MHz VDS = 380V, VGS = 0V, f = 1MHz VDS = 0V to 480V, VGS = 0V
-
1950 75.9 3 43.2 196.4 45 8.7 14.5 1
-
pF pF pF pF pF nC nC nC
Drain Open, f=1MHz
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 380V, ID = 11A RG = 4.7
(Note 4)
-
16.9 16.7 49 4
-
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 11A VGS = 0V, ISD = 11A dIF/dt = 100A/s 350 6 22 66 1.2 A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7.3A, RG = 25, Starting TJ = 25C 3. ISD 22A, di/dt 200A/s, VDD 380V, Starting TJ = 25C 4. Essentially Independent of Operating Temperature Typical Characteristics
FCA22N60N Rev. A2
2
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FCA22N60N N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
100
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
Figure 2. Transfer Characteristics
100
ID,Drain Current[A]
10
1
VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V
ID,Drain Current[A]
150 C -55 C
o
o
10
25 C
o
0.1
0.3
1 VDS,Drain-Source Voltage[V]
10
1 2 3
*Notes: 1. VDS = 20V 2. 250s Pulse Test
4 5 6 7 VGS,Gate-Source Voltage[V]
8
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
0.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
0.3
IS, Reverse Drain Current [A]
150 C
o
10
25 C
o
VGS = 10V
0.2
VGS = 20V
0.1 0 10
*Note: TC = 25 C
o
*Notes: 1. VGS = 0V
20 30 40 ID, Drain Current [A]
50
60
1 0.0
2. 250s Pulse Test
0.5 1.0 VSD, Body Diode Forward Voltage [V]
1.5
Figure 5. Capacitance Characteristics
1E5
Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 120V VDS = 300V VDS = 480V
10000
Ciss
8
Capacitances [pF]
1000
Crss
6
100
4
10
*Note: 1. VGS = 0V 2. f = 1MHz
2
*Note: ID = 11A
1 0.1
1 10 100 VDS, Drain-Source Voltage [V]
600
0 0
10 20 30 40 Qg, Total Gate Charge [nC]
50
FCA22N60N Rev. A2
3
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FCA22N60N N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
BVDSS, [Normalized] Drain-Source Breakdown Voltage
Figure 8. On-Resistance Variation vs. Temperature
3.0 RDS(on), [Normalized] Drain-Source On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100
*Notes: 1. VGS = 10V 2. ID = 11A
1.1
1.0
0.9
*Notes: 1. VGS = 0V 2. ID = 1mA
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
Figure 9. Maximum Safe Operating Area
100
10s 100s
Figure 10. Maximum Drain Current vs. Case Temperature
25
ID, Drain Current [A]
20 ID, Drain Current [A]
10
1ms 10ms
15
1
Operation in This Area is Limited by R DS(on)
DC
10
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
5
0.01 1
10 100 VDS, Drain-Source Voltage [V]
1000
0 25
50 75 100 125 o TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
1
Thermal Response [Z JC]
0.5
0.2
0.1
0.1 0.05
PDM t1
*Notes:
0.02 0.01 Single pulse
t2
o
1. ZJC(t) = 0.61 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t)
0.01 -5 10
10
-4
10 10 10 Rectangular Pulse Duration [sec]
-3
-2
-1
1
10
FCA22N60N Rev. A2
4
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FCA22N60N N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FCA22N60N Rev. A2
5
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FCA22N60N N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as D U T
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * IS D c o n t r o lle d b y p u ls e p e r io d
VGS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v /d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lt a g e D r o p
FCA22N60N Rev. A2
6
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FCA22N60N N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FCA22N60N Rev. A2
7
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FCA22N60N N-Channel MOSFET
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPMTM F-PFSTM PowerTrench(R) The Power Franchise(R) FRFET(R) PowerXSTM Build it NowTM (R) SM Programmable Active DroopTM CorePLUSTM Global Power Resource Green FPSTM QFET(R) CorePOWERTM TinyBoostTM Green FPSTM e-SeriesTM QSTM CROSSVOLTTM TinyBuckTM Quiet SeriesTM GmaxTM CTLTM TinyLogic(R) GTOTM RapidConfigureTM Current Transfer LogicTM TINYOPTOTM IntelliMAXTM EcoSPARK(R) TinyPowerTM EfficentMaxTM ISOPLANARTM TM TinyPWMTM EZSWITCHTM * MegaBuckTM Saving our world, 1mW /W /kW at a timeTM TinyWireTM TM* MICROCOUPLERTM SmartMaxTM TriFault DetectTM MicroFETTM SMART STARTTM TRUECURRENTTM* MicroPakTM SPM(R) (R) SerDesTM MillerDriveTM STEALTHTM (R) Fairchild MotionMaxTM SuperFETTM (R) Fairchild Semiconductor Motion-SPMTM SuperSOTTM-3 FACT Quiet SeriesTM OPTOLOGIC(R) SuperSOTTM-6 UHC(R) (R) (R) FACT SuperSOTTM-8 OPTOPLANAR Ultra FRFETTM (R) (R) FAST SupreMOSTM UniFETTM FastvCoreTM SyncFETTM VCXTM FETBenchTM Sync-LockTM VisualMaxTM PDP SPMTM (R)* FlashWriter XSTM (R)* Power-SPMTM FPSTM
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I40
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FCA22N60N Rev. A2
8
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